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Transistor
2SC4391
Silicon NPN epitaxial planer type
For low-frequency output amplification Complementary to 2SA1674
0.7
Unit: mm
6.90.1 4.0
(1.0) (0.2) 4.50.1
2.50.1 (0.8)
(0.5)
s Features
q q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
(Ta=25C)
Ratings 80 80 5 1.5 1 1 150 -55 ~ +150 1cm2 Unit V
14.50.5
Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Allowing supply with the radial taping.
0.65 max.
(1.0)
0.45+0.10 -0.05 2.50.5 2.50.5
1.050.05
0.45+0.10 -0.05
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
1
2
3
V V A A W C C
1.20.1 0.65 max. 0.45+0.1 - 0.05
Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available.
1:Emitter 2:Collector 3:Base MT-2-A1 Package
Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion
or more, and the board
(HW type)
s
Electrical Characteristics (Ta=25C)
Parameter Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = 40V, IE = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 2V, IC = 100mA VCE = 2V, IC = 500mA*2 IC = 500mA, IB = 50mA*2 IC = 500mA, IB = 50mA*2 VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 80 80 5 120 60 0.15 0.85 120 10
*2
min
typ
max 0.1
Unit A V V V
Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance
340
0.3 1.2
V V MHz
20
pF
Pulse measurement
*1h
FE1
Rank classification
R 120 ~ 240 S 170 ~ 340
Rank hFE1
457
Transistor
PC -- Ta
1.2 1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion.
2SC4391
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
10 3 1 Ta=75C 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 25C -25C
VCE(sat) -- IC
IC/IB=10
Collector power dissipation PC (W)
1.0
1.0
Collector current IC (A)
0.8
0.8
IB=8mA
0.6
0.6
7mA 6mA 5mA 4mA 3mA
0.4
0.4
2mA
0.2
0.2
1mA
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10
0.1
0.3
1
3
10
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
10
hFE -- IC
IC/IB=10 500 VCE=2V 200
fT -- I E
VCB=10V Ta=25C
Base to emitter saturation voltage VBE(sat) (V)
400
Transition frequency fT (MHz)
0.3 1 3 10
3 1 0.3 25C Ta=-25C 0.1 100C 0.03 0.01 0.003 0.001 0.01 0.03
Forward current transfer ratio hFE
160
300
120
Ta=100C 200 25C -25C 100
80
40
0.1
0.3
1
3
10
0 0.01 0.03
0.1
0 -1
-3
-10
-30
-100 -300 -1000
Collector current IC (A)
Collector current IC (A)
Emitter current IE (mA)
Cob -- VCB
60
Collector output capacitance Cob (pF)
50
IE=0 f=1MHz Ta=25C
40
30
20
10
0 1 3 10 30 100
Collector to base voltage VCB (V)
458
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A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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